Suppression of three-dimensional island nucleation during GaAs growth on Si(100)
- 11 November 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 67 (20), 2826-2829
- https://doi.org/10.1103/physrevlett.67.2826
Abstract
Very-low-energy (≊28 eV), high-flux (≊0.4 mA/) Ar-ion irradiation during molecular-beam epitaxy changed the nucleation of GaAs on Si(100) from Stranski-Krastanov to a mechanism approaching layer-by-layer growth. While three-dimensional island nucleation was eliminated, the growth surface exhibited low-amplitude undulations. The results are explained by ion-induced removal of atoms from stable 3D islands, which suppressed 3D island nucleation.
Keywords
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