Annealing characteristics of highly P+-ion-implanted silicon crystal—two-step anneal

Abstract

Single‐step and double‐step annealing behavior of highly P⁺‐ion‐implanted layers was investigated by means of four‐point probe measurements, x‐ray double‐crystal spectrometry, and electron diffraction patterns. The x‐ray double‐crystal spectrometry data indicated that, in the case of single‐step annealing, the layer implanted with doses lower than 3×10¹⁵/cm² ions was recovered with the increase of annealing temperature, while the sample implanted with doses of 1×10¹⁶/cm² ions showed the opposite behavior. That is, the latter sample showed a very bad recrystallized layer with polycrystalline regions when it was annealed at temperatures higher than 1000 °C. However, in the case of double‐step annealing, the higher‐temperature annealing process, conducted after long 560 °C annealing, made it possible to obtain a good recrystallized layer, compared with the single‐step annealing case. These results were confirmed by electron diffraction patterns.