The effect of arsenic pressure on impurity diffusion in gallium arsenide
- 1 December 1961
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 21 (3-4), 318-320
- https://doi.org/10.1016/0022-3697(61)90114-7
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Diffusion in Compound SemiconductorsPhysical Review B, 1961
- Influence of Arsenic Pressure on the Doping of Gallium Arsenide with GermaniumJournal of Applied Physics, 1960
- Diffusion of zinc in gallium arsenideJournal of Physics and Chemistry of Solids, 1960
- Self-diffusion in indium antimonide and gallium antimonideActa Metallurgica, 1957