Temperature effects in a RIPE reactor
- 1 March 1991
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 13 (1-4), 459-462
- https://doi.org/10.1016/0167-9317(91)90133-x
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Chemical physics of fluorine plasma-etched silicon surfaces: Study of surface contaminationsJournal of Applied Physics, 1990
- Conductance considerations in the reactive ion etching of high aspect ratio featuresApplied Physics Letters, 1989
- Temperature dependence of silicon nitride etching by atomic fluorineJournal of Applied Physics, 1989
- Mécanismes d'anisotropie dans la gravure du silicium en plasma SF6. Modèle de gravureRevue de Physique Appliquée, 1986