Energy Loss of H, D, andHe4Ions Channeled Through Thin single Crystals of Silicon

Abstract

The energy loss of ions channeled through the $〈111〉$ Si channel is studied in the energy range 0.9 to 5.0 MeV. The energy dependence of the ratio between channeling and random stopping power above 3 MeV shows an increase which can be interpreted in terms of core-electron excitation. The velocity dependence of the channeling stopping power is also studied.