Effect of hydrostatic pressure on photoconductivity and electroluminescence of GaP:N
- 15 March 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 24 (6), 279-281
- https://doi.org/10.1063/1.1655182
Abstract
The electroluminescence and photoconductivity of GaP:N diodes have been studied as a function of temperature and hydrostatic pressure. The A‐line absorption and emission is relatively unaffected despite the large decrease in the electron binding energy with hydrostatic pressure. A model is discussed which accounts broadly for the experimental facts.Keywords
This publication has 8 references indexed in Scilit:
- Photocurrent measurements on GaP : N green-light-emitting diodesApplied Physics Letters, 1973
- Recombination Processes Responsible for the Room-Temperature Near-Band-Gap Radiation from GaPPhysical Review B, 1973
- Effect of Uniaxial Stress on the Binding to Isoelectronic Impurities in GaPPhysical Review B, 1972
- Radiative recombination mechanisms in GaAsP diodes with and without nitrogen dopingJournal of Applied Physics, 1972
- Efficient green electroluminescent junctions in GaPSolid-State Electronics, 1971
- Fluorescent Decay Times of Excitons Bound to Isoelectronic Traps in GaP and ZnTePhysical Review B, 1967
- Isoelectronic Traps Due to Nitrogen in Gallium PhosphidePhysical Review B, 1966
- Band Structure of Gallium Phosphide from Optical Experiments at High PressurePhysical Review B, 1964