Kondo Effect in Electromigrated Gold Break Junctions

Abstract

We present gate-dependent transport measurements of Kondo impurities in bare gold break junctions, generated with high yield using an electromigration process that is actively controlled. Thirty percent of measured devices show zero-bias conductance peaks. Temperature dependence suggests Kondo temperatures approximately 7 K. The peak splitting in magnetic field is consistent with theoretical predictions for g = 2, though in many devices the splitting is offset from 2g mu(B)B by a fixed energy. The Kondo resonances observed here may be due to atomic-scale metallic grains formed during electromigration.