Bipolar transistor action in ion implanted diamond

Abstract

Using a natural type IIb diamond, which is p-type semiconducting, as a substrate material, and implanting this diamond with carbon ions to induce n-type regions, diode and bipolar transistor action could be obtained. Owing to the geometrical positions of the collector, base, and emitter, which in this case were lateral to the surface, very low current gain was obtained. However, the results indicate that an improvement in the geometry will probably lead to a diamond transistor of high gain.