Diffusion-limited growth of oxide precipitates in czochralski silison
- 5 August 1980
- journal article
- other
- Published by Elsevier in Journal of Crystal Growth
- Vol. 49 (4), 749-752
- https://doi.org/10.1016/0022-0248(80)90304-8
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Growth of Stacking Faults by Bardeen-Herring Mechanism in Czochralski SiliconJapanese Journal of Applied Physics, 1979
- Oxygen precipitation and stacking-fault formation in dislocation-free siliconJournal of Applied Physics, 1977
- Characterization of structural defects in annealed silicon containing oxygenJournal of Applied Physics, 1976
- Observations of lattice defects using the weak‐beam techniqueJournal of Microscopy, 1973
- The solubility of oxygen in siliconJournal of Physics and Chemistry of Solids, 1959