Temperature dependence of the gold acceptor energy level in silicon
- 1 October 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (7), 413-415
- https://doi.org/10.1063/1.1655530
Abstract
Using the spectral distribution of the optical emission rates it is shown that the gold acceptor energy level in silicon is probably pinned to the conduction band in the temperature range between 90 and 242 K.Keywords
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