Defect chemical explanation for the effect of air anneal on CdS/CuInSe2 solar cell performance
- 6 February 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (6), 558-560
- https://doi.org/10.1063/1.100930
Abstract
We formulate a consistent defect chemical model of the effect of air/O2 anneals on CdS/CuInSe2 devices. The model centers on O‐induced neutralization of (near) surface donor states in CuInSe2 grains. The simplest identification of these states is with ionized Se vacancies, due to coordinatively unsaturated In on grain surfaces and boundaries.Keywords
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