A lateral microscopic growth model for heterogeneous impurity incorporation during Czochralski crystal growth
- 1 December 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (11), 1001-1003
- https://doi.org/10.1063/1.91762
Abstract
The occurrence of heterogeneous impurity incorporation during growth of Czochralski silicon and germanium crystals is attributed to a microscopic kinetic mechanism of terrace growth. This is deduced from the close correspondence of striation patterns in bulk crystals with terrace traces in GaAs layers grown by liquid phase epitaxy. A simplified but generally applicable model of terrace growth for both epitaxial layers and bulk crystals is presented. The model does not depend on the occurence of constitutional supercooling.Keywords
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