Surface morphology of HCI etched silicon wafers: III. the origin of etch pits
- 30 September 1979
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 47 (3), 437-448
- https://doi.org/10.1016/0022-0248(79)90212-4
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- The influence of adsorption and step reconstruction on the growth and etching vectors of silicon (111)Journal of Crystal Growth, 1978
- Surface morphology of HCl etched silicon wafersJournal of Crystal Growth, 1978
- Surface morphology of HCl etched silicon wafers: I. Gas phase composition in the silicon HCl system and surface reactions during etchingJournal of Crystal Growth, 1977
- XLV. On the dislocation theory of evaporation of crystalsPhilosophical Magazine, 1956