RHEED oscillation study by modulated electron beam during GaAs growth
- 1 February 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 81 (1-4), 9-12
- https://doi.org/10.1016/0022-0248(87)90356-3
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Reflection high energy electron diffraction intensity behavior during homoepitaxial molecular beam epitaxy growth of GaAs and implications for growth kinetics and mechanismsJournal of Vacuum Science & Technology B, 1985
- Reflection high-energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurementsApplied Physics Letters, 1985
- Surface Stoichiometry and Morphology of MBE Grown (001)GaAs through the Analysis of RHEED OscillationsJapanese Journal of Applied Physics, 1985
- The dependence of RHEED oscillations on MBE growth parametersJournal of Vacuum Science & Technology B, 1985
- Monte-Carlo simulations of MBE growth of III–V semiconductors: The growth kinetics, mechanism, and consequences for the dynamics of RHEED intensityJournal of Vacuum Science & Technology B, 1985
- Diffraction from stepped surfaces: I. Reversible surfacesSurface Science, 1984
- Dynamics of film growth of GaAs by MBE from Rheed observationsApplied Physics A, 1983
- Self-masking selective epitaxy by molecular-beam methodJournal of Applied Physics, 1977