Epitaxial Growth of InP on GaAs in an Open Flow System
- 1 September 1968
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 7 (9)
- https://doi.org/10.1143/jjap.7.1142
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Epitaxial Growth of Doped and Pure GaAs in an Open Flow SystemJournal of the Electrochemical Society, 1965
- n-n Semiconductor heterojunctionsSolid-State Electronics, 1963
- Preparation of Epitaxial GaAs and GaP Films by Vapor Phase ReactionJournal of the Electrochemical Society, 1962
- Open Tube Epitaxial Synthesis of GaAs and GaPJournal of the Electrochemical Society, 1962
- Preparation of Crystals of InAs, InP, GaAs, and GaP by a Vapor Phase ReactionJournal of the Electrochemical Society, 1959