A photoluminescence study of Si-implantation-induced mixing of GaAlAs/GaAs MQW structures for optical waveguides
- 1 June 1989
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 4 (6), 472-475
- https://doi.org/10.1088/0268-1242/4/6/009
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Ion Implanted Strip Optical Waveguides in GaAs/GaAl as MQW MaterialMRS Proceedings, 1988
- Impurity-induced disorder-delineated optical waveguides in GaAs-AlGaAs superlatticesApplied Physics Letters, 1987
- Transverse junction stripe laser with a lateral heterobarrier by diffusion enhanced alloy disorderingApplied Physics Letters, 1986
- Photoluminescence and stimulated emission in Si- and Ge-disordered AlxGa1−xAs-GaAs superlatticesJournal of Applied Physics, 1985
- GaAlAs buried multiquantum well lasers fabricated by diffusion-induced disorderingApplied Physics Letters, 1984