Replication of 175-Å lines and spaces in polymethylmethacrylate using x-ray lithography
- 1 January 1980
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (1), 93-96
- https://doi.org/10.1063/1.91287
Abstract
A new technique for fabricating high contrast x-ray masks with simple patterns of lines and spaces less than 50 Å in width is described. The successful replication of 175-A lines and spaces in polymethylmethacrylate (PMMA) using the carbon K (45-Å) x-ray is reported. It was found that PMMA structures smaller than 150 Å in width lost their physical integrity and would not adhere to SiO2 substrates.Keywords
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