Electron transport properties of strained InxGa1−xAs
- 22 January 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (4), 346-348
- https://doi.org/10.1063/1.102780
Abstract
As a first approach to the study of strained pseudomorphic materials, we have used a Monte Carlo method to calculate the effect of strain on electron transport properties of bulk InGaAs. Strain‐induced velocity reduction is found to be much more pronounced for InGaAs grown on GaAs substrate than for InGaAs grown on InP substrate.Keywords
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