Electrical characterization to 4 THz of N- and P-type GaAs using THz time-domain spectroscopy
- 17 August 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (7), 840-842
- https://doi.org/10.1063/1.107762
Abstract
Using a high‐performance optoelectronic THz beam system for time‐domain spectroscopy, we have measured the absorption and index of refraction of N‐ and P‐type doped GaAs from low frequencies to 4 THz. From these measurements the complex conductance was obtained over the same frequency range. All of the results were well fit by Drude theory.Keywords
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