INFLUENCE OF OXIDATION RATE AND HEAT TREATMENT ON THE DENSITY OF SURFACE STATES IN THE Si–SiO2 SYSTEM
- 15 August 1965
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 7 (4), 108-110
- https://doi.org/10.1063/1.1754312
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Limitations of the MOS capacitance method for the determination of semiconductor surface propertiesIEEE Transactions on Electron Devices, 1965
- The defect structure of grown silicon dioxide filmsIEEE Transactions on Electron Devices, 1965
- LOW ENERGY ELECTRON DIFFRACTION STUDY OF SILICON SURFACE STRUCTURESAnnals of the New York Academy of Sciences, 1963
- Field Effect‐Capacitance Analysis of Surface States on SiliconPhysica Status Solidi (b), 1963
- On the Logarithmic Rate Law in Chemisorption and OxidationThe Journal of Chemical Physics, 1955