Resonance Raman scattering by LO phonons in Te at the + gap
- 15 March 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 31 (6), 3705-3711
- https://doi.org/10.1103/physrevb.31.3705
Abstract
We have studied the resonance of the first- and second-order Raman scattering by LO phonons in Te for x≊1 near the + gap. We show that the effect of alloying is a shift and a broadening of the resonances which can be compared with calculations of the compositional dependence of the gaps. The mechanisms contributing to one-LO-phonon and two-LO-phonon scattering are discussed and experimentally investigated. We give absolute values for the Raman efficiencies and compare them with theory.
Keywords
This publication has 26 references indexed in Scilit:
- Interference effects: A key to understanding forbidden Raman scattering by LO phonons in GaAsPhysical Review B, 1985
- Vibrational properties of HgCdTe systemJournal of Applied Physics, 1984
- Raman scattering from (1Solid State Communications, 1984
- Ellipsometric studies of electronic interband transitions inPhysical Review B, 1984
- Interference between Allowed and Forbidden Raman Scattering by Longitudinal-Optical Phonons in GaAsPhysical Review Letters, 1983
- Raman scattering in Hg0.8Cd0.2TeJournal of Vacuum Science & Technology A, 1983
- Observation of short-order clustering effect in Cd1−xHgxTeSolid State Communications, 1983
- Light Scattering in Solids IIPublished by Springer Nature ,1982
- Lattice dynamics of Cd‐rich Cd1−xHgxTe alloysPhysica Status Solidi (b), 1979
- Resonant Raman Scattering from LO Phonons in Polar SemiconductorsPhysical Review B, 1969