Preparation and Properties of In[sub x],Ga[sub 1−x]As Single Crystals by Solution Growth Technique

Abstract

Single‐crystalline layers were grown epitaxially on substrates by the solution‐growth technique. X‐ray microanalyses showed that the value of “x” obtained in was between 0.0 and 0.2. Hall measurements were made for undoped crystals as a function of the composition x. The crystals were n‐type and their mobilities varied little as x increased from 0.0 to 0.2. Doping of some impurities, such as Zn and Ge, was tried. Ge was found to be an amphoteric impurity in the crystals, and a pn junction could be made in one solution‐growth cycle.