Monolithically integrated In0.53Ga0.47As-PIN/InP-MISFET photoreceiver

1 January 1984

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 20 (8), 314-315
https://doi.org/10.1049/el:19840213

Abstract

In0.53Ga0.47As PIN photodiode and InP MISFET were monolithically integrated on an Fe-doped semi-insulating InP substrate. Photoreceiver sensitivities were measured at 100 Mbit/s NRZ pseudorandom signals.

Keywords

P-I-N PHOTODIODE
IN0.53GA0.47AS
MOSFET
LINEAR IC
OPTICAL COMMUNICATION EQUIPMENT
100 MBIT/S
III-V SEMICONDUCTOR
FE DOPED SEMIINSULATING SUBSTRATE
PHOTORECEIVER
MONOLITHIC IC
OPTOELECTRONIC DEVICES
SENSITIVITY
PHOTODETECTORS
INP MISFET

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