Room-temperature continuous operation of p-n AlxGa1−xAs-GaAs quantum well heterostructure lasers grown on Si
- 31 August 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (9), 637-639
- https://doi.org/10.1063/1.98371
Abstract
We describe the construction and room‐temperature (300 K) continuous (cw) operation of p‐n diode AlxGa1−xAs‐GaAs quantum well heterostructure (QWH) lasers grown on Si substrates. The QWH crystal is grown in two stages, the first part by molecular beam epitaxy (MBE) and the single‐well quantum well active region by metalorganic chemical vapor deposition (MOCVD). Simple gain‐guided stripe configuration lasers fabricated on the MBE MOCVD QWH wafer operate cw at 300 K and have pulsed thresholds as low as 1.8×103 A/cm2.Keywords
This publication has 5 references indexed in Scilit:
- Stable continuous room-temperature laser operation of AlxGa1−xAs-GaAs quantum well heterostructures grown on SiApplied Physics Letters, 1987
- Continuous (300 K) photopumped laser operation of AlxGa1−xAs‐GaAs quantum well heterostructures grown on strained‐layer GaAs on SiApplied Physics Letters, 1987
- Low threshold pulsed and continuous laser oscillation from AlGaAs/GaAs double heterostructures grown by metalorganic chemical vapor deposition on Si substratesApplied Physics Letters, 1987
- Low-threshold high-efficiency AlGaAs-GaAs double-heterostructure injection lasers grown on Si substrates by metalorganic chemical vapor depositionApplied Physics Letters, 1987
- Metalorganic chemical vapor deposition of III-V semiconductorsJournal of Applied Physics, 1985