Computation of Third Central Moments for Projected Range Distributions of Common Ion-Implanted Dopants in Silicon
- 1 January 1973
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Heavy-ion range profiles and associated damage distributionsRadiation Effects, 1972
- Spatial distribution of ions incident on solid target as a function of instantaneous energyRadiation Effects, 1971
- The Influence of the Amorphous Phase on Ion Distributions and Annealing Behavior of Group III and Group V Ions Implanted into SiliconJournal of the Electrochemical Society, 1971
- Ranges of projectiles in amorphous materialsCanadian Journal of Physics, 1968
- IMPLANTATION PROFILES FOR 40-keV PHOSPHORUS IONS IN SILICON SINGLE-CRYSTAL SUBSTRATESApplied Physics Letters, 1966