Electro-optical light modulation in InGaAsP/InP double heterostructure diodes
- 15 April 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (8), 692-694
- https://doi.org/10.1063/1.94075
Abstract
The linear electro-optic coefficient r41 was determined in quaternary double heterostructure waveguides containing a p-n junction. Over the limited range of measurements, it is independent of wavelength and composition with a value r41=−1.4×10−10 cm/V. A strong quadratic electro-optic effect has been identified for the first time, which strongly depends on the band gap and photon energy as does the associated electroabsorption effect.Keywords
This publication has 9 references indexed in Scilit:
- Linear Electrooptic Properties of InPJapanese Journal of Applied Physics, 1980
- Electroabsorption in GaInAsPApplied Physics Letters, 1979
- Rib waveguide switches with MOS electrooptic control for monolithic integrated optics in GaAs-Al_xGa_1−xAsApplied Optics, 1978
- Phase modulation nonlinearity of double-heterostructure p-n junction diode light modulatorsJournal of Applied Physics, 1974
- Electroabsorption in Aly Ga1−y As–Alx Ga1−x As double heterostructuresApplied Physics Letters, 1973
- Electro-Optic and Waveguide Properties of Reverse-Biased Gallium PhosphideJunctionsPhysical Review B, 1969
- Electro-optic and Piezoelectric Coefficients and Refractive Index of Gallium PhosphideJournal of Applied Physics, 1968
- Electrooptic light modulatorsProceedings of the IEEE, 1966
- OPTICAL SECOND HARMONIC GENERATION IN PIEZOELECTRIC CRYSTALSApplied Physics Letters, 1964