Quenched‐In Bulk Defects and Interface States in MOS Structures Measured by Transient Capacitance Spectroscopy
- 1 October 1978
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 125 (10), 1664-1667
- https://doi.org/10.1149/1.2131268