Shrinkage effect of stacking faults during HCl oxidation in steam
- 1 August 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (3), 136-138
- https://doi.org/10.1063/1.89002
Abstract
The generation and shrinkage of stacking faults during HCl oxidation in steam were investigated. Carrier gas, N2 or O2, was bubbled through H2O and mixed with HCl. In wet O2+HCl oxidation, the faults expanded at the beginning of oxidation and then shrank rapidly. However, the shrinkage of the faults was not observed in wet N2+HCl oxidation. The presence of O2 in the atmosphere influences the shrinkage of stacking faults during HCl oxidation in steam. A thick oxide film without faults can be easily obtained in this oxidation.Keywords
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