A bipolar monolithic multigigabit/s decision circuit
- 1 August 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 19 (4), 462-467
- https://doi.org/10.1109/jssc.1984.1052167
Abstract
A monolithic multigigabit/s decision circuit using a 0.5-/spl mu/m bipolar process technology called advanced super self-aligned technology (SST-1A) has been developed. A special decision circuit including a novel current switch based on a nonthreshold logic circuit and a cutoff prevention principle was designed and fabricated. An output voltage swing of 1 V across a 50-/spl Omega/ load, a fast transition time of 90 ps (10-90%) and 3.6 Gbit/s operation have been achieved. Power dissipation per chip is about 600 mW. This IC is applicable to very-high-speed optical fiber transmission system repeaters.Keywords
This publication has 2 references indexed in Scilit:
- Rapid-transfer principles for transistor switching circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Gigabit logic bipolar technology: advanced super self-aligned process technologyElectronics Letters, 1983