Electronic Properties of Grain Boundaries
- 1 January 1985
- book chapter
- Published by Springer Nature in Springer Series in Solid-State Sciences
Abstract
No abstract availableThis publication has 27 references indexed in Scilit:
- Conductivity in polycrystalline silicon—physics and rigorous numerical treatmentIEEE Transactions on Electron Devices, 1983
- Grain boundary states and the characteristics of lateral polysilicon diodesSolid-State Electronics, 1982
- Electrical Properties of Dislocations and Boundaries in SemiconductorsMRS Proceedings, 1982
- Anomalous low-frequency grain-boundary capacitance in siliconApplied Physics Letters, 1980
- Electrical properties of polycrystalline GaAs filmsJournal of Applied Physics, 1980
- Grain boundary states and varistor behavior in silicon bicrystalsApplied Physics Letters, 1979
- The dc voltage dependence of semiconductor grain-boundary resistanceJournal of Applied Physics, 1979
- Zero-bias resistance of grain boundaries in neutron-transmutation-doped polycrystalline siliconJournal of Applied Physics, 1978
- Current Flow across Grain Boundaries in n-Type Germanium. IJournal of Applied Physics, 1961
- Theory of an Experiment for Measuring the Mobility and Density of Carriers in the Space-Charge Region of a Semiconductor SurfacePhysical Review B, 1958