Bolometric infrared spectra of (I
- 15 September 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 36 (8), 4254-4259
- https://doi.org/10.1103/physrevb.36.4254
Abstract
Low-temperature infrared absorption spectra of the charge-density-wave conductor ( I, were taken between 230 and 4000 by using the sample as a bolometric self-detector. Absorption edges observed for light polarized parallel and perpendicular to the conducting axis are broad, presumably due to iodine disorder. The edge observed with parallel polarization is weaker, more temperature dependent, and at lower energy than that observed for perpendicular polarization. The anisotropy is interpreted in terms of a two-band model incorporating interchain coupling, but the strong temperature dependence of the smaller gap is difficult to reconcile with the measured activation energy. No absorption features that could be correlated with midgap soliton states were observed.
Keywords
This publication has 19 references indexed in Scilit:
- Bolometric measurement of the charge-density-wave gap in TaS3Physical Review B, 1986
- Low-frequency dielectric response of the charge-density wave in (IPhysical Review B, 1986
- Midgap State in Nearly Commensurate Charge-Density WavesPhysical Review Letters, 1985
- X-ray diffraction study of the CDW phase in (TaSe4)2I: Determination of the CDW modulation amplitudeSolid State Communications, 1985
- Charge density wave conduction: A novel collective transport phenomenon in solidsPhysics Reports, 1985
- Incommensurate superlattice reflections in quasi one dimensional conductors, (MSe4)2I (M=Ta and Nb)Solid State Communications, 1984
- Charge density wave transport in a novel inorganic chain compound, (TaSe4)2ISolid State Communications, 1983
- Charge density wave transport in (TaSe4)2ISolid State Communications, 1983
- Preparation and structure of ditantalum iodide octaselenide, Ta2ISe8Acta Crystallographica Section B: Structural Science, Crystal Engineering and Materials, 1982
- Pressure dependence of the metal-semiconductor transition in TaS3Solid State Communications, 1979