We have studied the electronic and geometrical structure of the cleaved GaAs(110) surface, using experimental ultraviolet photoemission spectroscopy (UPS) of both filled and empty surface states together with tight-binding calculations. We have considered several different types of structural models, including the relaxation model in which surface Ga atoms move into, and As atoms move out of, the surface by an amount such that the plane through the nearest-neighbor Ga and As atoms makes a tilt angle, ϑT, with the corresponding plane in the ideal surface while bond lengths remain constant. We show that this model with a tilt angle ϑT∠19° in contrast with ϑT∠35° as previously concluded from (LEED) low-energy electron-diffraction analysis adequately accounts for the photoemission spectroscopy data. A description of the nature of surface states including the local s- and p-orbital densities of states and dispersion relations is given for this relaxation model.