The effect of InP substrate misorientation on GaInAs-AlInAs interface and alloy quality
- 1 October 1988
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (7), 3476-3480
- https://doi.org/10.1063/1.341482
Abstract
The quality of GaInAs-AlInAs epitaxial layers is found to be critically dependent on the degree of (100)-InP substrate misorientation. The alloy quality of both materials is improved when the substrate is misoriented 4° off the (100). The heterojunction interface quality as determined by the full width at half-maximum of quantum-well photoluminescence is also improved when a substrate misoriented by 4° is used. A degradation of both alloy and interface quality as compared to material on (100) InP is observed when the misorientation is 2°. These effects are also observed for strained quantum-well structures.Keywords
This publication has 5 references indexed in Scilit:
- Photoluminescence broadening mechanisms in high quality GaInAs-AlInAs quantum well structuresApplied Physics Letters, 1988
- Influence of an intentional substrate misorientation on deep electron traps in AlGaAs grown by molecular beam epitaxyApplied Physics Letters, 1987
- Role of kinetics and thermodynamics in alloy clustering and surface quality in InAlAs grown by molecular-beam epitaxy: Consequences for optical and transport propertiesJournal of Applied Physics, 1986
- Reflection high-energy electron diffraction oscillations from vicinal surfaces—a new approach to surface diffusion measurementsApplied Physics Letters, 1985
- GaInAs-AlInAs structures grown by molecular beam epitaxyJournal of Applied Physics, 1981