The effects of laser illumination and high energy electrons on molecular-beam epitaxial growth of CdTe
Open Access
- 1 January 1991
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (1), 268-272
- https://doi.org/10.1063/1.347706
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Properties of HgCdTe films and Hg-based quantum well structures grown by photoassisted molecular-beam epitaxyJournal of Vacuum Science & Technology A, 1989
- Improved structural quality of molecular-beam epitaxy HgCdTe filmsJournal of Vacuum Science & Technology A, 1989
- Excited confined quantum states in CdMnTe-CdTe superlatticesJournal of Applied Physics, 1989
- Electrical properties of CdTe metal–semiconductor field effect transistorsJournal of Vacuum Science & Technology A, 1988
- Growth and properties of doped CdTe films grown by photoassisted molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1988
- CdTe metal-semiconductor field-effect transistorsApplied Physics Letters, 1987
- Controlled substitutional doping of CdTe thin films grown by photoassisted molecular-beam epitaxyJournal of Vacuum Science & Technology A, 1987
- p-type CdTe epilayers grown by photoassisted molecular beam epitaxyApplied Physics Letters, 1986
- Growth of high mobility n-type CdTe by photoassisted molecular beam epitaxyApplied Physics Letters, 1986
- Photostimulated molecular layer epitaxyJournal of Vacuum Science & Technology A, 1986