Pressure dependence of the lowest direct absorption edge of ZnSe
- 30 November 1985
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 56 (6), 479-483
- https://doi.org/10.1016/0038-1098(85)90697-0
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Total-energy differences: Sources of error in local-density approximationsPhysical Review B, 1985
- Photoelastic trends for amorphous and crystalline solids of differing network dimensionalityPhysical Review B, 1981
- Pressure-induced structural transitions in partially ionic semiconductors: Self-consistent pseudopotential approach to ZnSePhysical Review B, 1980
- Photoluminescence in heavily doped GaAs. II. Hydrostatic pressure dependencePhysical Review B, 1980
- Pressure dependence of the direct absorption edge of InPPhysical Review B, 1980
- Effect of hydrostatic pressure on the direct absorption edge of germaniumPhysical Review B, 1977
- Dependence of the direct energy gap of GaAs on hydrostatic pressurePhysical Review B, 1975
- Linear methods in band theoryPhysical Review B, 1975
- Reflectivity ofSingle CrystalsPhysical Review B, 1972
- A local exchange-correlation potential for the spin polarized case. iJournal of Physics C: Solid State Physics, 1972