Epitaxial regrowth of Ne- and Kr-implanted amorphous silicon
- 1 October 1978
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (10), 5207-5212
- https://doi.org/10.1063/1.324416
Abstract
The recrystallization of Ne‐ and Kr‐implanted amorphous silicon layers has been studied. Investigation of the growth kinetics at temperatures between 525 and 575 °C showed that the amorphous layer regrows completely. During annealing, 75% of the Ne diffused out while Kr out‐diffusion could only be obtained by annealing the samples at 900 to 1000 °C after complete regrowth had already been established. TEM analysis revealed Ne bubbles in the as‐implanted samples. Bubbles and microtwins in the epitaxially regrown layers were found in the Ne‐implanted samples and in some of the Kr‐implanted samples. Microtwins were only detected when bubbles were simultaneously present.Keywords
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