Stimulated emission with the longest wavelength in the blue region from GaInN/GaN multi-quantum well structures
- 15 June 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 189-190, 831-836
- https://doi.org/10.1016/s0022-0248(98)00304-2
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- InGaN Laser Diode Grown on 6H–SiC Substrate Using Low-Pressure Metal Organic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1997
- Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum WellsJapanese Journal of Applied Physics, 1997
- Optical Properties of Strained AlGaN and GaInN on GaNJapanese Journal of Applied Physics, 1997
- Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire SubstratesJapanese Journal of Applied Physics, 1996
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- Shortest wavelength semiconductor laser diodeElectronics Letters, 1996
- First-principles calculations of effective-mass parameters of AlN and GaNPhysical Review B, 1995
- New Approach in Equilibrium Theory for Strained Layer RelaxationPhysical Review Letters, 1994
- Defects in epitaxial multilayersJournal of Crystal Growth, 1976
- Synthesis and growth of single crystals of gallium nitrideJournal of Materials Science, 1970