A 4 kbit synchronous static random access memory based upon delta-doped complementary heterostructure insulated gate field effect transistor technology
- 9 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Complementary III-V heterostructure FETs for low power integrated circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistorsIEEE Transactions on Electron Devices, 1989
- A self-aligned gate III-V heterostructure FET process for ultrahigh-speed digital and mixed analog/digital LSI/VLSI circuitsIEEE Transactions on Electron Devices, 1989