Subthreshold slope of thin-film SOI MOSFET's
- 1 April 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 7 (4), 244-246
- https://doi.org/10.1109/edl.1986.26359
Abstract
Silicon-on-insulator (SOI) n-channel transistors have been made in thin (90 nm) silicon films. Both modeling and experimental results show that excellent subthreshold slopes can be obtained (62 mV/ decade) when the silicon film thickness is smaller than the maximum depletion depth in the transistor channel. For comparison, the subthreshold slope of transistors made in thicker films is also reported.Keywords
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