Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's
- 1 October 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 30 (10), 1244-1251
- https://doi.org/10.1109/t-ed.1983.21282
Abstract
The charge coupling between the front and back gates of thin-film silicon-on-insulator (SOI: e.g,, recrystallized Si on SiO2) MOSFET's is analyzed, and closed-form expressions for the threshold voltage under all possible steady-state conditions are derived. The expressions clearly show the dependence of the linear-region channel conductance on the back-gate bias and on the device parameters, including those of the back silicon-insulator interface. The analysis is supported by current-voltage measurements of laser-recrystallized SOI MOSFET's. The results suggest how the back-gate bias may be used to optimize the performance of the SOI MOSFET in particular applications.Keywords
This publication has 9 references indexed in Scilit:
- Moderate inversion in MOS devicesSolid-State Electronics, 1982
- Threshold voltage models of short, narrow and small geometry MOSFET's: A reviewSolid-State Electronics, 1982
- Device fabrication in {100} silicon-on-oxide produced by a scanning CW-laser-induced lateral seeding techniqueIEEE Transactions on Electron Devices, 1982
- A buried channel/surface channel CMOS IC isolated by an implanted silicon dioxide layerIEEE Transactions on Electron Devices, 1982
- n-channel deep-depletion metal-oxide-semiconductor field-effect transistors fabricated in zone-melting-recrystallized polycrystalline Si films on SiO2Applied Physics Letters, 1981
- Theory of the fully depleted SOS/MOS transistorSolid-State Electronics, 1980
- A two-dimensional analysis for MOSFET's fabricated on buried SiO2layerIEEE Transactions on Electron Devices, 1980
- Characteristics of MOSFETs fabricated in laser-recrystallized polysilicon islands with a retaining wall structure on an insulating substrateIEEE Electron Device Letters, 1980
- One-gate-wide CMOS Inverter on laser-recrystallized polysiliconIEEE Electron Device Letters, 1980