CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz
- 1 December 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 17 (12), 584-585
- https://doi.org/10.1109/55.545778
Abstract
We report on a 0.15-μm gate length AlGaN/GaN doped channel heterostructure field effect transistor (DC-HFET) with maximum frequency of oscillation in excess of 97 GHz. HFETs based on our doped channel design exhibited CW microwave operation up to 15 GHz with a maximum output power of approximately 270 mW/mm at 10 GHz. These values are still limited by parasitics and can be significantly improved by optimizing the device design.Keywords
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