Temperature dependence of the photothermal conductivity of semiconductors at low temperatures
- 20 April 1980
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 13 (11), 2139-2145
- https://doi.org/10.1088/0022-3719/13/11/013
Abstract
A careful analysis has been made of the temperature dependence of the signal strength in a photoconductivity experiment in a semiconductor. The temperature dependence of the line intensity in a photothermal conductivity spectrum has been calculated. The results are in excellent agreement with measurements on high-purity germanium containing boron, aluminium and phosphorus as residual impurities ( approximately 1011 atoms cm-3).Keywords
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