High hole concentrations in Mg-doped InGaN grown by MOVPE
- 31 December 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 221 (1-4), 267-270
- https://doi.org/10.1016/s0022-0248(00)00697-7
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
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