Study and application of the mass transport phenomenon in InP
- 1 May 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (5), 2407-2412
- https://doi.org/10.1063/1.332355
Abstract
A study of the mass transport phenomenon in InP is presented. Conditions and possible explanation for the transport process are discussed. Characteristics of the mass transported InP homojunctions are described and compared with those in the InP–InGaAsP heterojunctions. Effects of the mass transported junction on laser performance are discussed.Keywords
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