Low threshold InGaAsP terrace mass transport laser on semi-insulating substrate
- 15 December 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (12), 1115-1117
- https://doi.org/10.1063/1.93420
Abstract
Very low threshold InGaAsP terrace lasers on semi-insulating (SI) InP substrate have been fabricated using the mass transport technique. The fabrication process involves a single-step liquid phase epitaxial (LPE) growth followed by a mass transport of InP at ∼675 °C in the presence of an InP cover wafer. Lasers operating in the fundamental transverse mode with smooth far-field patterns and threshold currents as low as 9.5 mA have been obtained.Keywords
This publication has 3 references indexed in Scilit:
- Mode stabilized terrace InGaAsP lasers on semi-insulating InPJournal of Applied Physics, 1982
- A novel technique for GaInAsP/InP buried heterostructure laser fabricationApplied Physics Letters, 1982
- GaInAsP/InP DH laser on semi-insulating InP substrate with terrace structureElectronics Letters, 1982