Properties of two-dimensional hole gases of inversion and accumulation layers in magnetic fields
- 1 April 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 170 (1-2), 601-605
- https://doi.org/10.1016/0039-6028(86)91026-5
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Self-consistent calculations of electric subbands in p-type GaAlAs-GaAs heterojunctionsSuperlattices and Microstructures, 1985
- Hole Subband at GaAs/AlGaAs Heterojunctions and Quantum WellsJournal of the Physics Society Japan, 1985
- Effective masses of holes at GaAs-AlGaAs heterojunctionsPhysical Review B, 1985
- Effect of Inversion Symmetry on the Band Structure of Semiconductor HeterostructuresPhysical Review Letters, 1984
- Calculation of hole subbands at the GaAs-interfacePhysical Review B, 1984
- Electronic structure and semiconductor-semimetal transition in InAs-GaSb superlatticesPhysical Review B, 1983
- Energy Structure and Quantized Hall Effect of Two-Dimensional HolesPhysical Review Letters, 1983
- Calculated Energy Levels and Optical Absorption in-Type Si Accumulation Layers at Low TemperaturePhysical Review Letters, 1974
- Quantum Theory of Cyclotron Resonance in Semiconductors: General TheoryPhysical Review B, 1956