Calculated Energy Levels and Optical Absorption in-Type Si Accumulation Layers at Low Temperature
- 14 October 1974
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 33 (16), 960-963
- https://doi.org/10.1103/physrevlett.33.960
Abstract
Self-consistent sub-band splittings and inter-sub-band optical matrix elements are calculated for -type accumulation layers at temperatures low enough that the bulk carriers are frozen out. The energy splittings are sensitive to the concentration of acceptor impurities in the surface space-charge layer.
Keywords
This publication has 9 references indexed in Scilit:
- Resonance Spectroscopy of Electronic Levels in a Surface Accumulation LayerPhysical Review Letters, 1974
- Low-temperature limit of screening length in semiconductorsPhysical Review B, 1974
- Tunneling study of surface quantization inPhysical Review B, 1974
- Electron Tunneling and Capacitance Studies of a Quantized Surface Accumulation LayerPhysical Review B, 1973
- Electron Tunneling through Te-TeO2-Pb JunctionsJournal of the Physics Society Japan, 1973
- Self-Consistent Results for-Type Si Inversion LayersPhysical Review B, 1972
- Effect of Electric and Magnetic Fields on the Self-Consistent Potential at the Surface of a Degenerate SemiconductorPhysical Review B, 1972
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- Optical Absorption Due to Space-Charge-Induced Localized StatesPhysical Review B, 1967