Experimental data on light emission behaviour from GaAs Schottky contacts
- 1 January 1982
- journal article
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 52 (1), 89-93
- https://doi.org/10.1080/00207218208901398
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- A New Etching Solution System, H 3 PO 4 ‐ H 2 O 2 ‐ H 2 O , for GaAs and Its KineticsJournal of the Electrochemical Society, 1978
- Selective Etching of Gallium Arsenide Crystals in H[sub 2]SO[sub 4]-H[sub 2]O[sub 2]-H[sub 2]O SystemJournal of the Electrochemical Society, 1971