Observations of CmFn Radicals in Reactive Ion Beam Etching
- 1 December 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (12A), L755
- https://doi.org/10.1143/jjap.21.l755
Abstract
CmFn radicals produced in an electron-cyclotron-resonance ion source for reactive ion beam etching of SiO2 were observed with photoionization mass spectrometry. Pressure dependence of the densities of radicals shows an apparent contribution of the radicals to the etching rate in a pressure region higher than about 2×10-2 Pa.Keywords
This publication has 14 references indexed in Scilit:
- A 26‐cm electron‐cyclotron‐resonance ion source for reactive ion beam etching of SiO2 and SiJournal of Vacuum Science and Technology, 1982
- Reaction of cyclohexane and cyclohexyl radicals with atomic and molecular oxygenJournal of the American Chemical Society, 1982
- Gas chromatography/photoionization mass spectrometryAnalytical Chemistry, 1978
- A simple axially-symmetric quadrupole SIMS spectrometerNuclear Instruments and Methods, 1978
- Mass spectrometric study of plasma etchingJournal of Vacuum Science and Technology, 1978
- Plasma diagnostics with electric probesJournal of Vacuum Science and Technology, 1978
- Diagnostic methods for sputtering plasmasJournal of Vacuum Science and Technology, 1978
- Extending the use of the atomic oxygen + nitrogen dioxide .far. nitric oxide + molecular oxygen reaction for measuring low oxygen atom concentrationsThe Journal of Physical Chemistry, 1974
- Detection of steady-state free-radical concentrations by photoionizationJournal of the American Chemical Society, 1972
- Mass-Spectrometric Study of Photoionization. III. Methane and Methane-d4The Journal of Chemical Physics, 1965