Anisotropic and inhomogeneous strain relaxation in pseudomorphic In0.23Ga0.77As/GaAs quantum wells
- 23 October 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (17), 1765-1767
- https://doi.org/10.1063/1.102212
Abstract
The structural properties of pseudomorphic In0.23Ga0.77As/GaAs single quantum wells are investigated with x‐ray double‐crystal diffractometry. Anisotropic tilting of lattice planes along dislocations and anisotropic reflectivity of fully relaxed domains coexisting with strained domains are reported for the first time. Due to the anisotropic strain relaxation the crystal symmetry changes from tetragonal in the fully strained case to monoclinic in a partially relaxed quantum well.Keywords
This publication has 16 references indexed in Scilit:
- Misfit dislocations in pseudomorphic In0.23Ga0.77As/GaAs quantum wells: Influence on lifetime and diffusion of excess excitonsJournal of Applied Physics, 1989
- Investigation of the critical layer thickness in elastically strained InGaAs/GaAlAs quantum wells by photoluminescence and transmission electron microscopyApplied Physics Letters, 1989
- Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayersJournal of Applied Physics, 1988
- Photoluminescence study of strain relaxation in Ga1−xInxAs/GaAs single heterostructuresJournal of Applied Physics, 1988
- Dislocation structure, formation, and minority-carrier recombination in AlGaAs/InGaAs/GaAs heterojunction bipolar transistorsJournal of Applied Physics, 1988
- Observation of compressive and tensile strains in InGaAs/GaAs by photoluminescence spectroscopyApplied Physics Letters, 1988
- Transmission electron microscopy of elastic relaxation effects in Si–Ge strained layer superlattice structuresJournal of Vacuum Science & Technology A, 1988
- Growth and characterization of AlGaAs/InGaAs/GaAs pseudomorphic structuresJournal of Vacuum Science & Technology B, 1988
- X-ray diffraction of multilayers and superlatticesActa Crystallographica Section A Foundations of Crystallography, 1986
- Dislocation morphology in graded heterojunctions: GaAs1?xPxJournal of Materials Science, 1969